the Tantalum-Niobium International Study Center (T.I.C.) : T.I.C. Bulletin Entry – No. 195

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T.I.C. Bulletin Entry – No. 195

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T.I.C. Bulletin Entry – No. 195

The Crystallographic Evolution Behaviour of Tantalum Sputtering Blanks During Heat Treatment

Explore how heat treatment changes the crystallographic structure of tantalum sputtering blanks used in advanced semiconductor manufacturing.

Feature Article Title:

The Crystallographic Evolution Behaviour of Tantalum Sputtering Blanks During Heat Treatment

Feature Article Summary:

This technical study examines how the grain structure and texture of high purity tantalum sputtering blanks change during heat treatment. Using quasi in situ EBSD analysis, the researchers track the behaviour of {111} and {100} oriented grains through the early and final stages of recrystallisation. The findings help explain how annealing temperature affects target performance and have supported the commercial development of 6N tantalum sputtering blanks for 300 mm semiconductor wafers.

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